VLSI Fabrication Principles Silicon and Gallium Arsenide,9780471580058

VLSI Fabrication Principles Silicon and Gallium Arsenide

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Edition: 2nd
ISBN13: 9780471580058
ISBN10: 0471580058
Format: Hardcover
Pub. Date: 1994-03-31
Publisher(s): Wiley-Interscience
List Price: $251.14

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Summary

Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Author Biography

Sorab K. Ghandhi is a professor Emeritus at Rensselaer Polytechnic Institute known for his pioneering work in electrical engineering and microelectronics education, and in the research and development of Organometallic Vapor Phase Epitaxy for compound semiconductors.

Table of Contents

Material Properties.
Phase Diagrams and Solid Solubility.
Crystal Growth and Doping.
Diffusion.
Epitaxy.
Ion Implantation.
Native Films.
Deposited Films.
Etching and Cleaning.
Lithographic Processes.
Device and Circuit Fabrication.
Appendix.
Index.

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