Silicon-On-Insulator Technology

by
Edition: 3rd
Format: Hardcover
Pub. Date: 2004-04-01
Publisher(s): Kluwer Academic Pub
List Price: $267.47

Rent Textbook

Select for Price
There was a problem. Please try again later.

Rent Digital

Rent Digital Options
Online:30 Days access
Downloadable:30 Days
$57.24
Online:60 Days access
Downloadable:60 Days
$76.32
Online:90 Days access
Downloadable:90 Days
$95.40
Online:120 Days access
Downloadable:120 Days
$114.48
Online:180 Days access
Downloadable:180 Days
$124.02
Online:1825 Days access
Downloadable:Lifetime Access
$190.80
$124.02

New Textbook

We're Sorry
Sold Out

Used Textbook

We're Sorry
Sold Out

How Marketplace Works:

  • This item is offered by an independent seller and not shipped from our warehouse
  • Item details like edition and cover design may differ from our description; see seller's comments before ordering.
  • Sellers much confirm and ship within two business days; otherwise, the order will be cancelled and refunded.
  • Marketplace purchases cannot be returned to eCampus.com. Contact the seller directly for inquiries; if no response within two days, contact customer service.
  • Additional shipping costs apply to Marketplace purchases. Review shipping costs at checkout.

Summary

Silicon-on-Insulator Technology: Materials to VLSI, Third Edition , retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition , also describes the properties of other SOI devices, such as multiple gate MOSFETs, dynamic threshold devices and power MOSFETs. The advantages and performance of SOI circuits used in both niche and mainstream applications are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition is recommended for use as a textbook for classes on semiconductor device processing and physics at the graduate level.

Table of Contents

1 INTRODUCTION 1(8)
2 SOI MATERIALS 9(60)
2.1 Introduction
9(2)
2.2 Heteroepitaxial techniques
11(4)
2.2.1 Silicon-on-Sapphire (SOS)
12(2)
2.2.2 Other heteroepitaxial SOI materials
14(2)
2.2.2.1 Silicon-on-Zirconia (SOZ)
14(1)
2.2.2.2 Silicon-on-Spinel
14(1)
2.2.2.3 Silicon on Calcium Fluoride
14(1)
2.3 Dielectric Isolation (DI)
15(1)
2.4 Polysilicon melting and recrystallization
16(6)
2.4.1 Laser recrystallization
16(3)
2.4.2 E-beam recrystallization
19(1)
2.4.3 Zone-melting recrystallization
20(2)
2.5 Homoepitaxial techniques
22(3)
2.5.1 Epitaxial lateral overgrowth
22(2)
2.5.2 Lateral solid-phase epitaxy
24(1)
2.6 FIPOS
25(2)
2.7 Ion beam synthesis of a buried insulator
27(14)
2.7.1 Separation by implanted oxygen (SIMOX)
28(12)
2.7.1.1 "Standard" SIMOX
28(3)
2.7.1.2 Low-dose SIMOX
31(2)
2.7.1.3 ITOX
33(1)
2.7.1.4 SIMOX MLD
34(1)
2.7.1.5 Related techniques
35(1)
2.7.1.6 Material quality
36(4)
2.7.2 Separation by implanted nitrogen (SIMNI)
40(1)
2.7.3 Separation by implanted oxygen and nitrogen (SIMON)
40(1)
2.7.4 Separation by implanted Carbon
41(1)
2.8 Wafer Bonding and Etch Back (BESOI)
41(5)
2.8.1 Hydrophilic wafer bonding
42(3)
2.8.2 Etch back
45(1)
2.9 Layer transfer techniques
46(10)
2.9.1 Smart-Cut®
46(7)
2.9.1.1 Hydrogen / rare gas implantation
47(2)
2.9.1.2 Bonding to a stiffener
49(1)
2.9.1.3 Annealing
50(2)
2.9.1.4 Splitting
52(1)
2.9.1.5 Further developments
52(1)
2.9.2 Eltran
53(3)
2.9.2.1 Porous silicon formation
53(1)
2.9.2.2 The original Eltran process
54(1)
2.9.2.3 Second-generation Eltran process
54(2)
2.9.3 Transferred layer material quality
56(1)
2.10 Strained silicon on insulator (SSOI)
56(2)
2.11 Silicon on diamond
58(1)
2.12 Silicon-on-nothing (SON)
58(11)
3 SOI MATERIALS CHARACTERIZATION 69(48)
3.1 Introduction
69(1)
3.2 Film thickness measurement
70(9)
3.2.1 Spectroscopic reflectometry
71(3)
3.2.2 Spectroscopic ellipsometry
74(3)
3.2.3 Electrical thickness measurement
77(2)
3.3 Crystal quality
79(14)
3.3.1 Crystal orientation
79(2)
3.3.2 Degree of crystallinity
81(3)
3.3.3 Defects in the silicon film
84(5)
3.3.3.1 Most common defects
84(1)
3.3.3.2 Chemical decoration of defects
85(2)
3.3.3.3 Detection of defects by light scattering
87(1)
3.3.3.4 Other defect assessment techniques
88(1)
3.3.3.5 Stress in the silicon film
89(1)
3.3.4 Defects In the buried oxide
89(1)
3.3.5 Bond quality and bonding energy
90(3)
3.4 Carrier lifetime
93(10)
3.4.1 Surface Photovoltage
93(2)
3.4.2 Photoluminescence
95(1)
3.4.3 Measurements on MOS transistors
96(7)
3.4.3.1 Accumulation-mode transistor
96(3)
3.4.3.2 Inversion-mode transistor
99(2)
3.4.3.3 Bipolar effect
101(2)
3.5 Silicon/Insulator interfaces
103(14)
3.5.1 Capacitance measurements
103(2)
3.5.2 Charge pumping
105(3)
3.5.3 ψ-MOSFET
108(9)
4 SOI CMOS TECHNOLOGY 117(34)
4.1 SOI CMOS processing
117(3)
4.1.1 Fabrication yield and fabrication cost
119(1)
4.2 Field isolation
120(7)
4.2.1 LOCOS
121(3)
4.2.2 Mesa isolation
124(1)
4.2.3 Shallow trench isolation
125(2)
4.2.4 Narrow-channel effects
127(1)
4.3 Channel doping profile
127(3)
4.4 Source and drain engineering
130(5)
4.4.1 Silicide source and drain
130(3)
4.4.2 Elevated source and drain
133(1)
4.4.3 Tungsten clad
134(1)
4.4.4 Schottky source and drain
135(1)
4.5 Gate stack
135(3)
4.5.1 Gate material
136(1)
4.5.2 Gate dielectric
136(1)
4.5.3 Gate etch
137(1)
4.6 SOI MOSNET layout
138(3)
4.6.1 Body contact
138(3)
4.7 SOI-bulk CMOS design comparison
141(1)
4.8 ESD protection
142(9)
5 THE SOI MOSFET 151(96)
5.1 Capacitances
151(3)
5.1.1 Source and drain capacitance
151(3)
5.1.2 Gate capacitance
154(1)
5.2 Fully and partially depleted devices
154(5)
5.3 Threshold voltage
159(10)
5.3.1 Body effect
164(3)
5.3.2 Short-channel effects
167(2)
5.4 Current-voltage characteristics
169(11)
5.4.1 Lim & Fossum model
170(5)
5.4.2 Cinfinity-continuous model
175(5)
5.5 Transconductance
180(5)
5.5.1 gm/ID ratio
182(1)
5.5.2 Mobility
183(2)
5.6 Basic parameter extraction
185(6)
5.6.1 Threshold voltage and mobility
185(3)
5.6.2 Source and drain resistance
188(3)
5.7 Subthreshold slope
191(7)
5.8 Ultra-thin SOI MOSFETs
198(3)
5.8.1 Threshold voltage
199(1)
5.8.2 Mobility
200(1)
5.9 Impact ionization and high-field effects
201(7)
5.9.1 Kink effect
201(3)
5.9.2 Hot-carrier degradation
204(4)
5.10 Floating-body and parasitic BJT effects
208(7)
5.10.1 Anomalous subthreshold slope
209(2)
5.10.2 Reduced drain breakdown voltage
211(2)
5.10.3 Other floating-body effects
213(2)
5.11 Self heating
215(1)
5.12 Accumulation-mode MOSFET
216(13)
5.12.1 I-V characteristics
217(7)
5.12.2 Subthreshold slope
224(5)
5.13 Unified body-effect representation
229(2)
5.14 RF MOSFETs
231(3)
5.15 CAD models for SOI MOSFETs
234(13)
6 OTHER SOI DEVICES 247(56)
6.1 Multiple-gate SOI MOSFETs
249(23)
6.1.1 Multiple-gate SOI MOSFET structures
249(5)
6.1.1.1 Double-gate SOI MOSFETs
249(1)
6.1.1.2 Triple-gate SOI MOSFETs
250(1)
6.1.1.3 Surrounding-gate SOI MOSFETs
251(1)
6.1.1.4 Triple-plus gate SOI MOSFETs
251(3)
6.1.2 Device characteristics
254(23)
6.1.2.1 Current drive
254(2)
6.1.2.2 Short-channel effects
256(5)
6.1.2.3 Threshold voltage
261(6)
6.1.2.4 Volume inversion
267(3)
6.1.2.5 Mobility
270(2)
6.2 MTCMOS/DTMOS
272(5)
6.3 High-voltage devices
277(6)
6.3.1 VDMOS and LDMOS
277(5)
6.3.2 Other high-voltage devices
282(1)
6.4 Junction Field-Effect Transistor
283(1)
6.5 Lubistor
284(1)
6.6 Bipolar junction transistors
285(2)
6.7 Photodiodes
287(1)
6.8 G4 FET
288(1)
6.9 Quantum-effect devices
289(14)
7 THE SOI MOSFET INA HARSH ENVIRONMENT 303(24)
7.1 Ionizing radiations
303(11)
7.1.1 Single -event phenomena
304(5)
7.1.2 Total dose effects
309(3)
7.1.3 Dose-rate effects
312(2)
7.2 High-temperature operation
314(13)
7.2.1 Leakage current
315(3)
7.2.2 Threshold voltage
318(3)
7.2.3 Output conductance
321(1)
7.2.4 Subthreshold slope
322(5)
8 SOI CIRCUITS 327(34)
8.1 Introduction
327(1)
8.2 Mainstream CMOS applications
328(14)
8.2.1 Digital circuits
328(2)
8.2.2 Low-voltage, low-power digital circuits
330(4)
8.2.3 Memory circuits
334(4)
8.2.3.1 Non volatile memory devices
336(1)
8.2.3.2 Capacitorless DRAM
337(1)
8.2.4 Analog circuits
338(2)
8.2.5 Mixed-mode circuits
340(2)
8.3 Niche applications
342(7)
8.3.1 High-temperature circuits
342(3)
8.3.2 Radiation-hardened circuits
345(3)
8.3.3 Smart-power circuits
348(1)
8.4 Three-dimensional integration
349(12)
INDEX 361

An electronic version of this book is available through VitalSource.

This book is viewable on PC, Mac, iPhone, iPad, iPod Touch, and most smartphones.

By purchasing, you will be able to view this book online, as well as download it, for the chosen number of days.

Digital License

You are licensing a digital product for a set duration. Durations are set forth in the product description, with "Lifetime" typically meaning five (5) years of online access and permanent download to a supported device. All licenses are non-transferable.

More details can be found here.

A downloadable version of this book is available through the eCampus Reader or compatible Adobe readers.

Applications are available on iOS, Android, PC, Mac, and Windows Mobile platforms.

Please view the compatibility matrix prior to purchase.