1 INTRODUCTION |
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1 | (8) |
2 SOI MATERIALS |
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9 | (60) |
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9 | (2) |
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2.2 Heteroepitaxial techniques |
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11 | (4) |
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2.2.1 Silicon-on-Sapphire (SOS) |
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12 | (2) |
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2.2.2 Other heteroepitaxial SOI materials |
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14 | (2) |
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2.2.2.1 Silicon-on-Zirconia (SOZ) |
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14 | (1) |
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2.2.2.2 Silicon-on-Spinel |
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14 | (1) |
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2.2.2.3 Silicon on Calcium Fluoride |
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14 | (1) |
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2.3 Dielectric Isolation (DI) |
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15 | (1) |
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2.4 Polysilicon melting and recrystallization |
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16 | (6) |
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2.4.1 Laser recrystallization |
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16 | (3) |
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2.4.2 E-beam recrystallization |
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19 | (1) |
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2.4.3 Zone-melting recrystallization |
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20 | (2) |
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2.5 Homoepitaxial techniques |
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22 | (3) |
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2.5.1 Epitaxial lateral overgrowth |
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22 | (2) |
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2.5.2 Lateral solid-phase epitaxy |
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24 | (1) |
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25 | (2) |
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2.7 Ion beam synthesis of a buried insulator |
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27 | (14) |
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2.7.1 Separation by implanted oxygen (SIMOX) |
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28 | (12) |
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28 | (3) |
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31 | (2) |
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33 | (1) |
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34 | (1) |
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2.7.1.5 Related techniques |
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35 | (1) |
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36 | (4) |
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2.7.2 Separation by implanted nitrogen (SIMNI) |
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40 | (1) |
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2.7.3 Separation by implanted oxygen and nitrogen (SIMON) |
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40 | (1) |
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2.7.4 Separation by implanted Carbon |
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41 | (1) |
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2.8 Wafer Bonding and Etch Back (BESOI) |
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41 | (5) |
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2.8.1 Hydrophilic wafer bonding |
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42 | (3) |
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45 | (1) |
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2.9 Layer transfer techniques |
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46 | (10) |
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46 | (7) |
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2.9.1.1 Hydrogen / rare gas implantation |
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47 | (2) |
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2.9.1.2 Bonding to a stiffener |
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49 | (1) |
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50 | (2) |
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52 | (1) |
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2.9.1.5 Further developments |
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52 | (1) |
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53 | (3) |
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2.9.2.1 Porous silicon formation |
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53 | (1) |
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2.9.2.2 The original Eltran process |
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54 | (1) |
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2.9.2.3 Second-generation Eltran process |
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54 | (2) |
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2.9.3 Transferred layer material quality |
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56 | (1) |
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2.10 Strained silicon on insulator (SSOI) |
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56 | (2) |
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58 | (1) |
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2.12 Silicon-on-nothing (SON) |
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58 | (11) |
3 SOI MATERIALS CHARACTERIZATION |
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69 | (48) |
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69 | (1) |
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3.2 Film thickness measurement |
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70 | (9) |
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3.2.1 Spectroscopic reflectometry |
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71 | (3) |
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3.2.2 Spectroscopic ellipsometry |
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74 | (3) |
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3.2.3 Electrical thickness measurement |
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77 | (2) |
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79 | (14) |
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3.3.1 Crystal orientation |
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79 | (2) |
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3.3.2 Degree of crystallinity |
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81 | (3) |
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3.3.3 Defects in the silicon film |
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84 | (5) |
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3.3.3.1 Most common defects |
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84 | (1) |
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3.3.3.2 Chemical decoration of defects |
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85 | (2) |
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3.3.3.3 Detection of defects by light scattering |
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87 | (1) |
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3.3.3.4 Other defect assessment techniques |
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88 | (1) |
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3.3.3.5 Stress in the silicon film |
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89 | (1) |
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3.3.4 Defects In the buried oxide |
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89 | (1) |
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3.3.5 Bond quality and bonding energy |
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90 | (3) |
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93 | (10) |
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3.4.1 Surface Photovoltage |
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93 | (2) |
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95 | (1) |
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3.4.3 Measurements on MOS transistors |
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96 | (7) |
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3.4.3.1 Accumulation-mode transistor |
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96 | (3) |
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3.4.3.2 Inversion-mode transistor |
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99 | (2) |
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101 | (2) |
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3.5 Silicon/Insulator interfaces |
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103 | (14) |
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3.5.1 Capacitance measurements |
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103 | (2) |
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105 | (3) |
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108 | (9) |
4 SOI CMOS TECHNOLOGY |
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117 | (34) |
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117 | (3) |
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4.1.1 Fabrication yield and fabrication cost |
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119 | (1) |
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120 | (7) |
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121 | (3) |
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124 | (1) |
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4.2.3 Shallow trench isolation |
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125 | (2) |
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4.2.4 Narrow-channel effects |
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127 | (1) |
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4.3 Channel doping profile |
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127 | (3) |
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4.4 Source and drain engineering |
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130 | (5) |
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4.4.1 Silicide source and drain |
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130 | (3) |
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4.4.2 Elevated source and drain |
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133 | (1) |
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134 | (1) |
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4.4.4 Schottky source and drain |
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135 | (1) |
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135 | (3) |
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136 | (1) |
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136 | (1) |
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137 | (1) |
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138 | (3) |
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138 | (3) |
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4.7 SOI-bulk CMOS design comparison |
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141 | (1) |
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142 | (9) |
5 THE SOI MOSFET |
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151 | (96) |
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151 | (3) |
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5.1.1 Source and drain capacitance |
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151 | (3) |
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154 | (1) |
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5.2 Fully and partially depleted devices |
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154 | (5) |
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159 | (10) |
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164 | (3) |
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5.3.2 Short-channel effects |
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167 | (2) |
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5.4 Current-voltage characteristics |
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169 | (11) |
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170 | (5) |
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5.4.2 Cinfinity-continuous model |
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175 | (5) |
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180 | (5) |
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182 | (1) |
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183 | (2) |
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5.6 Basic parameter extraction |
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185 | (6) |
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5.6.1 Threshold voltage and mobility |
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185 | (3) |
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5.6.2 Source and drain resistance |
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188 | (3) |
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191 | (7) |
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5.8 Ultra-thin SOI MOSFETs |
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198 | (3) |
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199 | (1) |
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200 | (1) |
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5.9 Impact ionization and high-field effects |
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201 | (7) |
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201 | (3) |
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5.9.2 Hot-carrier degradation |
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204 | (4) |
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5.10 Floating-body and parasitic BJT effects |
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208 | (7) |
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5.10.1 Anomalous subthreshold slope |
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209 | (2) |
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5.10.2 Reduced drain breakdown voltage |
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211 | (2) |
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5.10.3 Other floating-body effects |
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213 | (2) |
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215 | (1) |
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5.12 Accumulation-mode MOSFET |
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216 | (13) |
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5.12.1 I-V characteristics |
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217 | (7) |
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5.12.2 Subthreshold slope |
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224 | (5) |
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5.13 Unified body-effect representation |
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229 | (2) |
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231 | (3) |
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5.15 CAD models for SOI MOSFETs |
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234 | (13) |
6 OTHER SOI DEVICES |
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247 | (56) |
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6.1 Multiple-gate SOI MOSFETs |
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249 | (23) |
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6.1.1 Multiple-gate SOI MOSFET structures |
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249 | (5) |
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6.1.1.1 Double-gate SOI MOSFETs |
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249 | (1) |
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6.1.1.2 Triple-gate SOI MOSFETs |
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250 | (1) |
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6.1.1.3 Surrounding-gate SOI MOSFETs |
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251 | (1) |
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6.1.1.4 Triple-plus gate SOI MOSFETs |
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251 | (3) |
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6.1.2 Device characteristics |
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254 | (23) |
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254 | (2) |
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6.1.2.2 Short-channel effects |
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256 | (5) |
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6.1.2.3 Threshold voltage |
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261 | (6) |
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267 | (3) |
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270 | (2) |
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272 | (5) |
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277 | (6) |
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277 | (5) |
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6.3.2 Other high-voltage devices |
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282 | (1) |
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6.4 Junction Field-Effect Transistor |
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283 | (1) |
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284 | (1) |
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6.6 Bipolar junction transistors |
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285 | (2) |
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287 | (1) |
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288 | (1) |
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6.9 Quantum-effect devices |
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289 | (14) |
7 THE SOI MOSFET INA HARSH ENVIRONMENT |
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303 | (24) |
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303 | (11) |
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7.1.1 Single -event phenomena |
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304 | (5) |
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309 | (3) |
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312 | (2) |
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7.2 High-temperature operation |
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314 | (13) |
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315 | (3) |
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318 | (3) |
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321 | (1) |
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322 | (5) |
8 SOI CIRCUITS |
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327 | (34) |
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327 | (1) |
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8.2 Mainstream CMOS applications |
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328 | (14) |
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328 | (2) |
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8.2.2 Low-voltage, low-power digital circuits |
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330 | (4) |
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334 | (4) |
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8.2.3.1 Non volatile memory devices |
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336 | (1) |
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8.2.3.2 Capacitorless DRAM |
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337 | (1) |
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338 | (2) |
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8.2.5 Mixed-mode circuits |
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340 | (2) |
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342 | (7) |
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8.3.1 High-temperature circuits |
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342 | (3) |
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8.3.2 Radiation-hardened circuits |
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345 | (3) |
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8.3.3 Smart-power circuits |
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348 | (1) |
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8.4 Three-dimensional integration |
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349 | (12) |
INDEX |
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361 | |